IBM EDRAM PDF

Huge on-chip eDRAM L3. – 6x latency improvement. – No off-chip signaling rqmt. – 8x bandwidth improvement. – 3x less area than SRAM. – 5x less energy than. In a previous Power8 article, the performance and scaling benefits of IBM’s eDRAM capability were mentioned. One thing that should be stated. IBM Corp. took another step toward embedded DRAM and away from SRAM at ISSCC this week, pushing eDRAM as the technology to take over the SRAM.

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Newer Post Older Post Home. After that, the low-resistivity titanium nitride TiN conformal layer is added.

I would expect that engineers tuned Power for the Database market. Using a technique such as reactive-ion etching you form a deep trench. The entire process described leads to the final product — the deep trench embedded DRAM. Clearly, this is more efficient than having to go off-package but not as efficient as staying on-chip. Interest in the open-source ISA marks a significant shift among chipmakers, but it will require continued industry support to be successful.

The Power Of eDRAM

If so maybe in zen 2? A model image following the fin patterning showing the strap and the interface between the SOI crystalline and the polycrystalline trench IBM, IEDM Below is a cross-sectional SEM shot of the entire stack from the 40x power rails at the very top to the deep trench capacitors under the devices.

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A poly strap i. The use of Static RAM has been traditionally beneficial to the chip manufacturers, since they could get fast and regular access to the memory cells, without having to wait for a slow refresh signal to propagate across the RAM.

Because of the growing needs to keep the data closer and certainly as more pieces of the system continue to get incorporated onto the same die, there appears to be renewed interest in eDRAM. Since this eliminates the need for the sidewall nitride spacer they have always used previously in order to protect the BOx during the interim processes, this change effectively managed to extract additional density from the denser packing of the trenches. Figure 3 also shows a picture of the metal-insulator-metal MIM structure of the capacitor for the bit cell.

One thing that should be stated upfront is that Haswell and Power8 are targeting different parts of the market.

Strange physics and future devices. Knowledge Ib Entities, people and technologies explored Learn More. This decision cost the cache a few cycles of latency. The Deep trench extends through the top silicon, through the oxide layer and into the base substrate. Zen 2 will be manufactured on 7LP, I have a report on it here. The discourse on possible trade-offs have been silent, which confuses me from the media.

Memories play a big role. December 25, 17 Comments.

IBM Reveals Breakthrough eDRAM Memory Technology | Kurzweil

June 18, at Incorporating both logic and DRAM on one silicon die and getting both to work well erdam a challenge. This name will be displayed publicly.

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Minimizing Chip Aging Effects Understanding aging factors within a design can help reduce the likelihood of product failures. October 29, No Comment. Every benefit comes with a drawbacks. Enabling Cheaper Design Brian Bailey. Connection to Network Management Network Management traditionally deals with extremely highly threaded workloads.

Memories play a […]. There, the fin switches from mono-Si to poly-Si which forms the connection to the DT capacitor. I wonder what the ratio of performance sdram to reduction in latency was in moving to eDRAM?

Process Corner Explosion At 7nm and below, modeling what will actually show up in silicon is a lot more complicated. With multi-process heavy workloads, where data in the cache may not be simultaneously accessed from different cores or hardware strands, eDRAM may be a good fit.

Network Management does require long term storage requirements of data, so this may be a very good back-end platform.

You then remove the hardmask and a thin high-k dielectric like HfO 2 is deposited and grown in the trench. Spelling error report The following text will be sent to our editors: Hybrid Memory Ed Sperling.